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FNA40860/B2 Smart Power Module
October 2010
FNA40860/B2
Smart Power Module
Features
* 600V-8A 3-phase IGBT inverter bridge including control ICs for gate driving and protection * Easy PCB layout due to built-in bootstrap diode and VS output * Divided negative dc-link terminals for inverter current sensing applications * Single-grounded power supply due to built-in HVIC * Built-in thermistor for over-temperature monitoring * Isolation rating of 2000Vrms/min.
Motion-SPM
General Description
TM
Applications
* AC 100V ~ 253V three-phase inverter drive for small power ac motor drives * Home appliances applications like air conditioner and refrigerator
It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and refrigerator. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out protection, short-circuit protection, and temperature monitoring. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals.
Additional Information
For further infomation, please see AN-9070 and FEB305-001 in http://www.fairchildsemi.com
Figure 1.
(c)2010 Fairchild Semiconductor Corporation
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FNA40860/B2 Rev. C
FNA40860/B2 Smart Power Module
Integrated Power Functions
* 600V-8A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
* For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection * For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection * Fault signaling: Corresponding to UV (Low-side supply) and SC faults * Input interface: 3.3/5V CMOS compatible, Schmitt trigger input
Pin Configuration Top View
VB(U) (26) V TH(1) R TH(2) VS(U)(25) VB(V)(24) V S(V)(23) P(3) V B(W)(22) VS(W)(21) U(4) Case Temperature (TC) Detecting Point V(5) IN (UH) (20) IN(VH)(19) IN(WH)(18) VCC(H) (17) VCC(L)(16) COM(15) IN (UL)(14) N U(7) N V(8) NW(9) IN (VL)(13) IN (WL) (12) VFO (11) CSC(10)
W(6)
Figure 2.
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FNA40860/B2 Smart Power Module
Pin Descriptions
Pin Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Pin Name
V TH RTH P U V W NU NV NW CSC VFO IN(WL) IN (VL) IN(UL) COM VCC(L) V CC(H) IN(WH) IN (VH) IN(UH) VS(W) VB(W) V S(V) V B(V) VS(U) VB(U) Thermistor Bias Voltage
Pin Description
Series Resistor for the Use of Thermistor (Temperature Detection) Positive DC-Link Input Output for U Phase Output for V Phase Output for W Phase Negative DC-Link Input for U Phase Negative DC-Link Input for V Phase Negative DC-Link Input for W Phase Capacitor (Low-pass Filter) for Short-Current Detection Input Fault Output Signal Input for Low-side W Phase Signal Input for Low-side V Phase Signal Input for Low-side U Phase Common Supply Ground Low-Side Common Bias Voltage for IC and IGBTs Driving High-Side Common Bias Voltage for IC and IGBTs Driving Signal Input for High-side W Phase Signal Input for High-side V Phase Signal Input for High-side U Phase High-side Bias Voltage Ground for W Phase IGBT Driving High-side Bias Voltage for W Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for U Phase IGBT Driving High-side Bias Voltage for U Phase IGBT Driving
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FNA40860/B2 Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
VTH (1) Thermister RTH (2) P (3)
(26) VB(U) (25) VS(U) (24) VB(V) (23) VS(V) (22) VB(W) (21) VS(W) (20) IN(UH) (19) IN(VH) (18) IN(WH) (17) VCC(H)
UVB UVS VVB VVS WVB WVS IN(UH) IN(VH) IN(WH) VCC COM OUT(WH) WVS
W(6)
OUT(UH) UVS
U(4)
OUT(VH) VVS
V (5)
(16) VCC(L) (15) COM (14) IN(UL) (13) IN(VL) (12) IN(WL) (11) VFO
VCC OUT(UL) COM IN(UL) IN(VL) IN(WL) VFO C(SC) OUT(VL)
NV (8) NU (7)
(10) CSC
OUT(WL)
NW (9)
Note: 1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. 2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions. 3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
Figure 3.
FNA40860/B2 Rev. C
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FNA40860/B2 Smart Power Module
Absolute Maximum Ratings (TJ = 25C,
Inverter Part Symbol
VPN V PN(Surge) VCES IC ICP PC TJ
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage Supply Voltage (Surge) Collector-emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature
Conditions
Applied between P- NU, NV, NW Applied between P- NU, NV, NW TC = 25C, TJ 150C TC = 25C, TJ 150C, Under 1ms Pulse Width TC = 25C per One Chip (Note 1)
Rating
450 500 600 8 16 32 -40 ~ 150
Units
V V V A A W C
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150C.
Control Part Symbol
VCC VBS VIN VFO IFO VSC
Parameter
Control Supply Voltage High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage
Conditions
Applied between V CC(H), VCC(L) - COM Applied between V B(U) - VS(U), VB(V) - VS(V), VB(W) - V S(W)
Rating
20 20
Units
V V V V mA V
Applied between IN(UH), IN(VH), IN(WH), -0.3~VCC +0.3 IN(UL), IN(VL), IN(WL) - COM Applied between V FO - COM Sink Current at V FO Pin Applied between C SC - COM -0.3~VCC +0.3 1 -0.3~VCC +0.3
Bootstrap Diode Part Symbol
VRRM IF IFP TJ
Parameter
Maximum Repetitive Reverse Voltage Forward Current Forward Current (Peak) Operating Junction Temperature TC = 25C
Conditions
Rating
600 0.5 1 -40 ~ 150
Units
V A A C
TC = 25C, Under 1ms Pulse Width
Total System Symbol
VPN(PROT) TSTG V ISO
Parameter
Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Storage Temperature Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5V TJ = 150C, Non-repetitive, less than 2ms 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate
Rating
400 -40 ~ 125 2000
Units
V C Vrms
Thermal Resistance Symbol
Rth(j-c)Q Rth(j-c)F
Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2.
Parameter
Junction to Case Thermal Resistance
Conditions
Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module)
Min.
-
Typ. Max. Units
3.8 4.8 C/W C/W
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FNA40860/B2 Smart Power Module
Electrical Characteristics (TJ = 25C, Unless Otherwise Specified)
Inverter Part Symbol
VCE(SAT) VF HS tON tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES
Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4.
Parameter
Collector-Emitter Saturation Voltage FWD Forward Voltage Switching Times
Conditions
VCC = VBS = 15V VIN = 5V VIN = 0V IC = 8A, TJ = 25C IF = 8A, TJ = 25C
Min.
0.45 -
Typ.
1.7 1.7 0.75 0.20 0.80 0.30 0.15 0.75 0.20 0.80 0.30 0.15 -
Max. Units
2.2 2.2 1.25 0.45 1.30 0.55 1.25 0.45 1.30 0.55 1 V V ms ms ms ms ms ms ms ms ms ms mA
VPN = 300V, V CC = VBS = 15V, IC = 8A TJ = 25C VIN = 0V 5V, Inductive Load (Note 3)
VPN = 300V, V CC = VBS = 15V, IC = 8A TJ = 25C VIN = 0V 5V, Inductive Load (Note 3)
0.45 -
Collector-Emitter Leakage Current
VCE = VCES
-
100% IC 100% IC
t rr V CE IC IC V CE
V IN t ON
10% IC V IN(ON )
V IN tO FF
V IN (OF F) 10% V C E
tC(O N)
10% V C E
t C(OFF)
10% I C
90% IC
(a) turn-on
(b) turn-off
Figure 4. Switching Time Definition
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FNA40860/B2 Smart Power Module
Switching Loss (Typical)
Inductive Load, VPN=300V, VCC=15V, TJ=25
IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec
600
600
Inductive Load, VPN=300V, VCC=15V, TJ=150
IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec
SWITCHING LOSS, ESW [uJ]
400
SWITCHING LOSS, ESW [uJ]
5 6 7 8 9
500
500
400
300
300
200
200
100
100
0
0
1
2
3
4
0
0
1
2
3
4
5
6
7
8
9
COLLECTOR CURRENT, Ic [AMPERES]
COLLECTOR CURRENT, Ic [AMPERES]
Figure 5. Switching Loss Characteristics
Control Part Symbol
IQCCH IQCCL IPCCH
Parameter
Quiescent V CC Supply Current Operating VCC Supply Current
Conditions
VCC(H) = 15V, IN(UH,VH,WH) = 0V VCC(L) = 15V, IN (UL,VL, WL) = 0V V CC(H) - COM V CC(L) - COM
Min.
-
Typ.
-
Max. Units
0.10 2.65 0.15 mA mA mA
VCC(H) = 15V, fPWM = 20kHz, V CC(H) - COM duty=50%, applied to one PWM signal input for High-side VCC(L) = 15V, fPWM = 20kHz, V CC(L) - COM duty=50%, applied to one PWM signal input for Low-side
IPCCL
-
-
3.65
mA
IQBS IPBS
Quiescent V BS Supply Current Operating VBS Supply Current Fault Output Voltage Short Circuit Trip Level Supply Circuit Under-Voltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermister
VBS = 15V, IN(UH, VH, WH) = 0V
V B(U) - VS(U), VB(V) V S(V), V B(W) - VS(W)
-
-
0.30 2.00
mA mA
VCC = V BS = 15V, fPWM = 20kHz, V B(U) - VS(U), VB(V) duty=50%, applied to one PWM V S(V), V B(W) - VS(W) signal input for High-side VSC = 0V, V FO Circuit: 4.7kW to 5V Pull-up VSC = 1V, V FO Circuit: 4.7kW to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level Detection Level Reset Level Applied between IN(UH), IN (VH), IN (WH), IN(UL), IN(VL), IN(WL) - COM @TTH =25C, (Note 5) @TTH =100C
VFOH VFOL VSC(ref) UVCCD UVCCR UV BSD UV BSR tFOD VIN(ON) VIN(OFF) RTH
4.5 0.45 10.5 11.0 10.0 10.5 30 0.8 -
0.5 47 2.9
0.5 0.55 13.0 13.5 12.5 13.0 2.6 -
V V V V V V V ms V V kW kW
Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application.
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FNA40860/B2 Smart Power Module
600 550 500 450
20 16
R-T Curve
R-T Curve in 50 ~ 125
Resistance[kW]
400 350 300 250 200 150 100 50 0 -20 -10 0 10 20
Resistance[kW]
12 8 4 0 50
60
70
80
90
100
110
120
Temperature [ ]
30
40
50
60
70
80
90
100
110
120
Temperature TTH[ ]
Figure. 6. R-T Curve of The Built-in Thermistor
Bootstrap Diode Part Symbol
VF trr
Parameter
Forward Voltage Reverse Recovery Time
Conditions
IF = 0.1A, TC = 25C IF = 0.1A, TC = 25C
Min.
-
Typ.
2.5 80
Max.
-
Units
V ns
1.0 0.9 0.8 0.7 0.6
Built in Bootstrap Diode VF-IF Characteristic
IF [A]
0.5 0.4 0.3 0.2 0.1 0.0
TC=25
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VF [V]
Note: 6. Built in bootstrap diode includes around 15 resistance characteristic.
Figure 7. Built in Bootstrap Diode Characteristic
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FNA40860/B2 Smart Power Module
Recommended Operating Conditions
Symbol
V PN VCC VBS dVCC/dt, dVBS/dt tdead fPWM V SEN PWIN(ON) P WIN(OFF)
Note: 7. SPM might not make response if input pulse width is less than the recommanded value.
Parameter
Supply Voltage Control Supply Voltage High-side Bias Voltage Control supply variation Blanking Time for Preventing Arm-short PWM Input Signal Voltage for Current Sensing Minimun Input Pulse Width
Conditions
Applied between P - NU , NV, N W Applied between V CC(H), VCC(L)-COM Applied between VB(U)-VS(U), V B(V)-VS(V) ,VB(W)-VS(W)
Value Min.
13.5 13.0 -1
Typ.
300 15 15 -
Max.
400 16.5 18.5 1 20 4
Units
V V V V/ms ms kHz V ms
For Each Input Signal -40C TJ 150C Applied between N U, NV, N W - COM (Including surge voltage) (Note 7)
1.5 -4 0.5 0.5
-
-
8 7 6 5
Allowable Maximum Output Current
fSW=5kHz
IOrms [Arms]
4 3 2 1 0
VDC=300V, VCC=VBS=15V TJ 150 , TC 125 M.I.=0.9, P.F.=0.8 Sinusoidal PWM
fSW=15kHz
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
Case Temperature, TC []
Note: 8. The allowable output current value may be different from the actual application.
Figure 8. Allowable Maximum Output Current
Package Marking and Ordering Information
Device Marking
FNA40860 FNA40860B2
Device
FNA40860 FNA40860B2
Package
SPM26-AAA SPM26-AAC
Reel Size
-
Tape Width
-
Quantity
12 12
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FNA40860/B2 Smart Power Module
Mechanical Characteristics and Ratings
Parameter
Device Flatness Mounting Torque Note Figure 9 Mounting Screw: - M3 Note Figure 10 Weight Recommended 0.7N*m Recommended 7.1kg*cm
Conditions
Limits Min.
0 0.6 6.2 -
Typ.
0.7 7.1 11
Max.
+120 0.8 8.1 -
Units
mm N*m kg*cm g
Figure 9. Flatness Measurement Position
Pre - Screwing : 12 Final Screwing : 21
2
1
Note: 9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction. 10. Avoid one side tightening stress. Fig.10 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged. The Pre-Screwing torque is set to 20~30% of maximum torque rating.
Figure 10. Mounting Screws Torque Order
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FNA40860/B2 Smart Power Module
Time Charts of SPMs Protective Function
Input Signal Protection Circuit State
UVCCR
RESET
a1
SET
RESET
a6
Control Supply Voltage
UVCCD a2
a3 a4 a7
Output Current Fault Output Signal
a5
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR ). a7 : Normal operation: IGBT ON and carrying current.
Figure 11. Under-Voltage Protection (Low-side)
Input Signal Protection Circuit State
UVBSR
RESET
b1
SET
RESET
b5
Control Supply Voltage
UVBSD b2
b3 b6 b4
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR ) b6 : Normal operation: IGBT ON and carrying current
Figure 12. Under-Voltage Protection (High-side)
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FNA40860/B2 Smart Power Module
Lower arms control input Protection Circuit state Internal IGBT Gate-Emitter Voltage SET
c4
c6
c7
RESET
c3 c2
SC
c1
Output Current
c8
Sensing Voltage of the shunt resistance Fault Output Signal
(with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Input "L" : IGBT OFF state.
c5
SC Reference Voltage
CR circuit time constant delay
c6 : Input "H": IGBT ON state, but during the active period of fault output the IGBT doesn't turn ON. c7 : IGBT OFF state
Figure 13. Short-Circuit Current Protection (Low-side Operation only)
Input/Output Interface Circuit
5V-Line (MCU or Control power) R PF=10k
SPM
IN(UH) , IN (VH) , IN(W H) IN (UL) , IN (VL) , IN(WL) VFO
MCU
COM
Note: 1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application's printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2) The logic input is compatible with standard CMOS outputs.
Figure 14. Recommended CPU I/O Interface Circuit
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FNA40860/B2 Smart Power Module
(26) VB(U)
HVIC
VB(U) VS(U) IN(UH) VB(V) VS(V) IN(VH) VB(W) VS(W) IN(WH) VCC VS(W) COM OUT(WH) OUT(VH) VS(V) OUT(UH) VS(U)
P (3)
CBS
RS
CBSC
(25) VS(U) (20) IN(UH)
Gating UH
U (4)
(24) VB(V)
CBS
RS
CBSC
(23) VS(V) (19) IN(VH)
Gating VH
(22) VB(W)
V (5)
M
CDCS VDC
CBS
CBSC
(21) VS(W) (18) IN(WH)
M C U
RS
Gating WH 15V line
CPS CPS CPS
(17) VCC(H)
CSP15
CSPC15
(15) COM
W (6)
5V line
(16) VCC(L)
LVIC
VCC OUT(UL) RSU
RPF
RS
CSPC05 CSP05
CPF RS
NU (7) (11) VFO
Fault
CBPF
VFO OUT(VL) IN(UL) IN(VL) IN(WL) COM CSC
THERMISTOR NV (8)
Gating UL Gating VL Gating WL
(14) IN(UL) (13) IN(VL) (12) IN(WL)
RSV
RS RS
CSC
CPS CPS CPS (10) CSC
OUT(WL)
NW (9)
RSW
RF RTH
(1) VTH (2) RTH
Input Signal for Short-Circuit Protection
Temp. Monitoring
U-Phase Current V-Phase Current W-Phase Current
Note: 1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3) VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA. Please refer to Figure14. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. (Recommended RS=100 , CPS=1nF) 6) To prevent errors of the protection function, the wiring around RF and C SC should be as short as possible. 7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2ms. 8) Each capacitor should be mounted as close to the pins of the SPM as possible. 9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22mF between the P&GND pins is recommended. 10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W) 12) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and frequency characteristics in CBSC. 13) For the detailed information, please refer to the AN-9070 and FEB305-001.
Figure 15. Typical Application Circuit
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FNA40860/B2 Smart Power Module
Detailed Package Outline Drawings(FNA40860)
FNA40860/B2 Rev. C
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FNA40860/B2 Smart Power Module
Detailed Package Outline Drawings(FNA40860B2, Long Terminal Type)
FNA40860/B2 Rev. C
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UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative / In Design First Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I38
No Identification Needed Obsolete
Full Production Not In Production

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